WMO080N10HG2 Todos los transistores

 

WMO080N10HG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO080N10HG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 108.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 395 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de WMO080N10HG2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMO080N10HG2 Datasheet (PDF)

 ..1. Size:980K  way-on
 wmo080n10hg2.pdf pdf_icon

WMO080N10HG2

WMO080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 100V, I =

 9.1. Size:670K  way-on
 wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf pdf_icon

WMO080N10HG2

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 9.2. Size:668K  way-on
 wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdf pdf_icon

WMO080N10HG2

WML08 WMK08N78N70EM, W 70EM, WMM08N70EM WMN08 WMP08N78N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is at

 9.3. Size:667K  way-on
 wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf pdf_icon

WMO080N10HG2

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

MOSTRAR MÁS

Otros transistores... WMK22N50C4 , WML22N50C4 , WMO030N06HG4 , WMO030N06LG4 , WMO048NV6HG4 , WMO048NV6LG4 , WMO053NV8HGS , WMO060N10HGS , 5N65 , WMO090NV6HG4 , WMO099N10HGS , WMO099N10LGS , WMO09N15TS , WMO09N20DM , WMO09N20DMH , WMO09P10TS , WMO100N07T1 .

History: NTF3055L175T1G

 

 
Back to Top

 


 
.