WMO080N10HG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO080N10HG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 395 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
WMO080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO080N10HG2 Datasheet (PDF)
wmo080n10hg2.pdf
WMO080N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device SGis well suited for high efficiency fast switching applications. TO-252Features V = 100V, I =
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
