All MOSFET. WMO080N10HG2 Datasheet

 

WMO080N10HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO080N10HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252

 WMO080N10HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO080N10HG2 Datasheet (PDF)

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