WMO080N10HG2. Аналоги и основные параметры

Наименование производителя: WMO080N10HG2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 108.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.6 ns

Cossⓘ - Выходная емкость: 395 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO080N10HG2

- подборⓘ MOSFET транзистора по параметрам

 

WMO080N10HG2 даташит

 ..1. Size:980K  way-on
 wmo080n10hg2.pdf pdf_icon

WMO080N10HG2

WMO080N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMO080N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S G is well suited for high efficiency fast switching applications. TO-252 Features V = 100V, I =

 9.1. Size:670K  way-on
 wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdf pdf_icon

WMO080N10HG2

WMM0 70C4, MO08N70C 08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C 08N70C4, WMP08N7 WM C4 700V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

 9.2. Size:668K  way-on
 wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdf pdf_icon

WMO080N10HG2

WML08 WMK08N7 8N70EM, W 70EM, WMM08N70EM WMN08 WMP08N7 8N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is at

 9.3. Size:667K  way-on
 wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdf pdf_icon

WMO080N10HG2

WMM0 60C4, MO08N60C 08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C 08N60C4, WMP08N6 WM C4 600V 0.65 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WM

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