WMO09N20DM Todos los transistores

 ..1. Size:636K  way-on
 wmo09n20dm.pdf

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 0.1. Size:636K  way-on
 wmo09n20dmh.pdf

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET Description WMO09N20DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 8.1. Size:629K  way-on
 wmo09n15ts.pdf

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET Description WMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 150V, I = 8.6A DS D TO-252 R

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

 9.2. Size:583K  way-on
 wmo099n10hgs.pdf

WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 9.3. Size:980K  way-on
 wmo09p10ts.pdf

WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -100V, I = -9A DS D R

 9.4. Size:968K  way-on
 wmo099n10lgs.pdf

WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device S is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A