WMO09N20DM. Аналоги и основные параметры

Наименование производителя: WMO09N20DM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13.4 ns

Cossⓘ - Выходная емкость: 42 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO09N20DM

- подборⓘ MOSFET транзистора по параметрам

 

WMO09N20DM даташит

 ..1. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09N20DM

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 0.1. Size:636K  way-on
 wmo09n20dmh.pdf pdf_icon

WMO09N20DM

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET Description WMO09N20DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

 8.1. Size:629K  way-on
 wmo09n15ts.pdf pdf_icon

WMO09N20DM

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET Description WMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 150V, I = 8.6A DS D TO-252 R

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09N20DM

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

ПОКАЗАТЬ ЕЩЁ

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