WMO09N20DM MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO09N20DM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41.3 nC
trⓘ - Rise Time: 13.4 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
WMO09N20DM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO09N20DM Datasheet (PDF)
wmo09n20dm.pdf
WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET DescriptionWMO09N20DM is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09n20dmh.pdf
WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET DescriptionWMO09N20DMH is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for Dapplications requiring high power density and high efficiency. And it is Svery robust and RoHS compliant. GTO-252Features V = 200V, I = 9A DS DR
wmo09n15ts.pdf
WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 8.6A DS D TO-252R
wmo090nv6hg4.pdf
WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. TO-252Features V = 65V, I = 68
wmo099n10hgs.pdf
WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
wmo09p10ts.pdf
WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -9A DS DR
wmo099n10lgs.pdf
WMO099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Sis well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I = 67A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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