WMO09N20DM Specs and Replacement

Type Designator: WMO09N20DM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.4 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO252

WMO09N20DM substitution

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WMO09N20DM datasheet

 ..1. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09N20DM

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R ... See More ⇒

 0.1. Size:636K  way-on
 wmo09n20dmh.pdf pdf_icon

WMO09N20DM

WMO09N20DMH 200V 9A 0.35 N-ch Power MOSFET Description WMO09N20DMH is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R ... See More ⇒

 8.1. Size:629K  way-on
 wmo09n15ts.pdf pdf_icon

WMO09N20DM

WMO09N15TS 150V N-Channel Enhancement Mode Power MOSFET Description WMO09N15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D S Features G V = 150V, I = 8.6A DS D TO-252 R ... See More ⇒

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09N20DM

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68... See More ⇒

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Detailed specifications: WMO048NV6LG4, WMO053NV8HGS, WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, AO3407, WMO09N20DMH, WMO09P10TS, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS

Keywords - WMO09N20DM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.