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WMO13P06T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO13P06T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22.3 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO252
 

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WMO13P06T1 Datasheet (PDF)

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 wmo13p06t1.pdf pdf_icon

WMO13P06T1

WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -60V, I = -13A DS DTO-252R

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 wmo13p10ts.pdf pdf_icon

WMO13P06T1

WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -13.4A DS DR

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 wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf pdf_icon

WMO13P06T1

WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

 9.2. Size:672K  way-on
 wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf pdf_icon

WMO13P06T1

WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80MWMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge performa

MOSTRAR MÁS

Otros transistores... WMO09P10TS , WMO100N07T1 , WMO115N15HG4 , WMO119N12LG4 , WMO120N04TS , WMO12P05T1 , WMO12P06TS , WMO13N10TS , IRF520 , WMO13P10TS , WMO140NV6LG4 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , WMO15N25T2 , WMO175N10HG4 , WMO175N10LG4 .

History: STH15NB50FI | WMJ12N100C2 | IRF7752 | TK10A80W | FDMC86265P | SMK630F | AO4400

 

 
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