WMO13P06T1 Todos los transistores

 

WMO13P06T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO13P06T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 29.8 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 13 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 22.3 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
   Paquete / Cubierta: TO252

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WMO13P06T1 Datasheet (PDF)

 ..1. Size:474K  way-on
wmo13p06t1.pdf

WMO13P06T1 WMO13P06T1

WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -60V, I = -13A DS DTO-252R

 8.1. Size:982K  way-on
wmo13p10ts.pdf

WMO13P06T1 WMO13P06T1

WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -13.4A DS DR

 9.1. Size:658K  way-on
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf

WMO13P06T1 WMO13P06T1

WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

 9.2. Size:672K  way-on
wml13n80m3 wmn13n80m3 wmm13n80m3 wmo13n80m3 wmp13n80m3 wmk13n80m3.pdf

WMO13P06T1 WMO13P06T1

WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80MWMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge performa

 9.3. Size:987K  way-on
wmo13n10ts.pdf

WMO13P06T1 WMO13P06T1

WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 100V, I = 13A DS DTO-252R

 9.4. Size:661K  way-on
wmm13n50c4 wml13n50c4 wmo13n50c4 wmn13n50c4 wmp13n50c4 wmk13n50c4.pdf

WMO13P06T1 WMO13P06T1

WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO

 9.5. Size:663K  way-on
wml13n65em wmk13n65em wmm13n65em wmn13n65em wmp13n65em wmo13n65em.pdf

WMO13P06T1 WMO13P06T1

WML13 WMK13N63N65EM, W 65EM, WMM13N65EM WMN13 WMP13N63N65EM, W 65EM, WMO13N65EM 650V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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