WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -60V, I = -13A DS DTO-252R

WMO13P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = -100V, I = -13.4A DS DR

WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

WML13N80M3, W 80M3, WM M3 WMN13N8 MM13N80MWMO1 80M3, WM M3 13N80M3, WMP13N8 MK13N80M 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge performa

WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 100V, I = 13A DS DTO-252R

WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO

WML13 WMK13N63N65EM, W 65EM, WMM13N65EM WMN13 WMP13N63N65EM, W 65EM, WMO13N65EM 650V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch