WMO13P06T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO13P06T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 29.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 22.3 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
WMO13P06T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO13P06T1 Datasheet (PDF)
wmo13p06t1.pdf
WMO13P06T1 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO13P06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = -60V, I = -13A DS DTO-252R
wmo13p10ts.pdf
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wmo13n10ts.pdf
WMO13N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO13N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 100V, I = 13A DS DTO-252R
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WMM13N50C4, WML13N5 WM C4 50C4, MO13N50CWMN13N50C4, WMP13N5 WM C4 50C4, MK13N50C 500V 0.4 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMO
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BFR84
History: BFR84
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