WMO20P04T1 Todos los transistores

 

WMO20P04T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMO20P04T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.1 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

WMO20P04T1 Datasheet (PDF)

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WMO20P04T1

WMO20P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features DS V = -40V, I = -20A DS DGR

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WMO20P04T1

WMO20P15TS 150V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = -150V, I = -20A DS DR

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WMO20P04T1

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 150V, I = 20A DS DTO-252R

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 5N65G-TF2-T | IXFR80N60P3 | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | PTP20N50A

 

 
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