All MOSFET. WMO20P04T1 Datasheet

 

WMO20P04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMO20P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252

 WMO20P04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMO20P04T1 Datasheet (PDF)

 ..1. Size:600K  way-on
 wmo20p04t1.pdf

WMO20P04T1 WMO20P04T1

WMO20P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features DS V = -40V, I = -20A DS DGR

 8.1. Size:649K  way-on
 wmo20p15ts.pdf

WMO20P04T1 WMO20P04T1

WMO20P15TS 150V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = -150V, I = -20A DS DR

 9.1. Size:416K  way-on
 wmo20n15t2.pdf

WMO20P04T1 WMO20P04T1

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 150V, I = 20A DS DTO-252R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM15P55K | KP979B

 

 
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