WMO20P04T1 Datasheet and Replacement
Type Designator: WMO20P04T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO252
WMO20P04T1 substitution
WMO20P04T1 Datasheet (PDF)
wmo20p04t1.pdf

WMO20P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features DS V = -40V, I = -20A DS DGR
wmo20p15ts.pdf

WMO20P15TS 150V P-Channel Enhancement Mode Power MOSFET DescriptionWMO20P15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = -150V, I = -20A DS DR
wmo20n15t2.pdf

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 150V, I = 20A DS DTO-252R
Datasheet: WMO15N25T2 , WMO175N10HG4 , WMO175N10LG4 , WMO18N20T2 , WMO18P10TS , WMO190N03TS , WMO190N15HG4 , WMO20N15T2 , AO3407 , WMO20P15TS , WMO240N10LG2 , WMO25N06TS , WMO25N10T1 , WMO25P03TS , WMO25P04TS , WMO25P06T1 , WMO28N15T2 .
Keywords - WMO20P04T1 MOSFET datasheet
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