WMO20P04T1 Datasheet. Specs and Replacement

Type Designator: WMO20P04T1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.1 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO252

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WMO20P04T1 datasheet

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 wmo20p04t1.pdf pdf_icon

WMO20P04T1

WMO20P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO20P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features D S V = -40V, I = -20A DS D G R ... See More ⇒

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 wmo20p15ts.pdf pdf_icon

WMO20P04T1

WMO20P15TS 150V P-Channel Enhancement Mode Power MOSFET Description WMO20P15TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = -150V, I = -20A DS D R ... See More ⇒

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 wmo20n15t2.pdf pdf_icon

WMO20P04T1

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET Description WMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 150V, I = 20A DS D TO-252 R ... See More ⇒

Detailed specifications: WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4, WMO20N15T2, AO4407, WMO20P15TS, WMO240N10LG2, WMO25N06TS, WMO25N10T1, WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2

Keywords - WMO20P04T1 MOSFET specs

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