WMO240N10LG2 Specs and Replacement

Type Designator: WMO240N10LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO252

WMO240N10LG2 substitution

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WMO240N10LG2 datasheet

 ..1. Size:656K  way-on
 wmo240n10lg2.pdf pdf_icon

WMO240N10LG2

WMO240N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description WMO240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

Detailed specifications: WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4, WMO20N15T2, WMO20P04T1, WMO20P15TS, MMIS60R580P, WMO25N06TS, WMO25N10T1, WMO25P03TS, WMO25P04TS, WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs