WMO240N10LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO240N10LG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.8 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252
WMO240N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO240N10LG2 Datasheet (PDF)
..1. Size:656K way-on
wmo240n10lg2.pdf
wmo240n10lg2.pdf
WMO240N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =
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