WMO190N03TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO190N03TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
Rise Time (tr): 13.2 nS
Drain-Source Capacitance (Cd): 585 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO252
WMO190N03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO190N03TS Datasheet (PDF)
wmo190n03ts.pdf
WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance.SGFeatures TO-252 V = 30V, I = 190A DS DR
wmo190n15hg4.pdf
WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
