All MOSFET. WMO175N10LG4 Datasheet

 

WMO175N10LG4 Datasheet and Replacement


   Type Designator: WMO175N10LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 67.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252
 

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WMO175N10LG4 Datasheet (PDF)

 ..1. Size:614K  way-on
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WMO175N10LG4

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

 5.1. Size:609K  way-on
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WMO175N10LG4

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

Datasheet: WMO13P06T1 , WMO13P10TS , WMO140NV6LG4 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , WMO15N25T2 , WMO175N10HG4 , IRF830 , WMO18N20T2 , WMO18P10TS , WMO190N03TS , WMO190N15HG4 , WMO20N15T2 , WMO20P04T1 , WMO20P15TS , WMO240N10LG2 .

History: IPB083N10N3 | SIHW47N60E | SIHW73N60E | SIHW33N60E | 22N65 | WMJ3N120D1 | WML22N50C4

Keywords - WMO175N10LG4 MOSFET datasheet

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