WMO175N10LG4 Specs and Replacement

Type Designator: WMO175N10LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 67.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

WMO175N10LG4 substitution

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WMO175N10LG4 datasheet

 ..1. Size:614K  way-on
 wmo175n10lg4.pdf pdf_icon

WMO175N10LG4

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This D S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

 5.1. Size:609K  way-on
 wmo175n10hg4.pdf pdf_icon

WMO175N10LG4

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

Detailed specifications: WMO13P06T1, WMO13P10TS, WMO140NV6LG4, WMO15N10T1, WMO15N12TS, WMO15N15T1, WMO15N25T2, WMO175N10HG4, IRF830, WMO18N20T2, WMO18P10TS, WMO190N03TS, WMO190N15HG4, WMO20N15T2, WMO20P04T1, WMO20P15TS, WMO240N10LG2

Keywords - WMO175N10LG4 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs