WMO175N10HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO175N10HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 67.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 144 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: TO252
WMO175N10HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO175N10HG4 Datasheet (PDF)
wmo175n10hg4.pdf
WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =
wmo175n10lg4.pdf
WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
