WMO175N10HG4 MOSFET Datasheet: N-Ch, 100V, 45A. Full specification with pinout and replacement list

WMO175N10HG4 Specs and Replacement

   Type Designator: WMO175N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 67.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: TO252

WMO175N10HG4 substitution

- MOSFET ⓘ Cross-Reference Search

WMO175N10HG4 datasheet

..1. Size:609K way-on
wmo175n10hg4.pdf pdf_icon

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

5.1. Size:614K way-on
wmo175n10lg4.pdf pdf_icon

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description WMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This D S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

Detailed specifications: WMO13N10TS , WMO13P06T1 , WMO13P10TS , WMO140NV6LG4 , WMO15N10T1 , WMO15N12TS , WMO15N15T1 , WMO15N25T2 , IRFZ46N , WMO175N10LG4 , WMO18N20T2 , WMO18P10TS , WMO190N03TS , WMO190N15HG4 , WMO20N15T2 , WMO20P04T1 , WMO20P15TS .