All MOSFET. WMO175N10HG4 Datasheet

 

WMO175N10HG4 Datasheet and Replacement


   Type Designator: WMO175N10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 67.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: TO252
 

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WMO175N10HG4 Datasheet (PDF)

 ..1. Size:609K  way-on
 wmo175n10hg4.pdf pdf_icon

WMO175N10HG4

WMO175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

 5.1. Size:614K  way-on
 wmo175n10lg4.pdf pdf_icon

WMO175N10HG4

WMO175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 100V, I =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG70R750FF | 6764 | IPD60R750E6 | KP775V | STB75NF20 | STP75N20 | HUF75617D3ST

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