WMO190N15HG4 Specs and Replacement

Type Designator: WMO190N15HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 121.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: TO252

WMO190N15HG4 substitution

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WMO190N15HG4 datasheet

 ..1. Size:613K  way-on
 wmo190n15hg4.pdf pdf_icon

WMO190N15HG4

WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 150V, I = ... See More ⇒

 7.1. Size:631K  way-on
 wmo190n03ts.pdf pdf_icon

WMO190N15HG4

WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = 30V, I = 190A DS D R ... See More ⇒

Detailed specifications: WMO15N12TS, WMO15N15T1, WMO15N25T2, WMO175N10HG4, WMO175N10LG4, WMO18N20T2, WMO18P10TS, WMO190N03TS, AON7403, WMO20N15T2, WMO20P04T1, WMO20P15TS, WMO240N10LG2, WMO25N06TS, WMO25N10T1, WMO25P03TS, WMO25P04TS

Keywords - WMO190N15HG4 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs