WMO190N15HG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO190N15HG4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 121.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24.8 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: TO252
WMO190N15HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO190N15HG4 Datasheet (PDF)
wmo190n15hg4.pdf
WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =
wmo190n03ts.pdf
WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance.SGFeatures TO-252 V = 30V, I = 190A DS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
