All MOSFET. WMO190N15HG4 Datasheet

 

WMO190N15HG4 Datasheet and Replacement


   Type Designator: WMO190N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 121.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO252
 

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WMO190N15HG4 Datasheet (PDF)

 ..1. Size:613K  way-on
 wmo190n15hg4.pdf pdf_icon

WMO190N15HG4

WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =

 7.1. Size:631K  way-on
 wmo190n03ts.pdf pdf_icon

WMO190N15HG4

WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance.SGFeatures TO-252 V = 30V, I = 190A DS DR

Datasheet: WMO15N12TS , WMO15N15T1 , WMO15N25T2 , WMO175N10HG4 , WMO175N10LG4 , WMO18N20T2 , WMO18P10TS , WMO190N03TS , HY1906P , WMO20N15T2 , WMO20P04T1 , WMO20P15TS , WMO240N10LG2 , WMO25N06TS , WMO25N10T1 , WMO25P03TS , WMO25P04TS .

History: AP2N050G | AONY36354 | IPB120N04S4-04 | JMTL3400A

Keywords - WMO190N15HG4 MOSFET datasheet

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