All MOSFET. WMO190N15HG4 Datasheet

 

WMO190N15HG4 Datasheet and Replacement


   Type Designator: WMO190N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 121.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO252
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WMO190N15HG4 Datasheet (PDF)

 ..1. Size:613K  way-on
 wmo190n15hg4.pdf pdf_icon

WMO190N15HG4

WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 150V, I =

 7.1. Size:631K  way-on
 wmo190n03ts.pdf pdf_icon

WMO190N15HG4

WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionWMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance.SGFeatures TO-252 V = 30V, I = 190A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15

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