WMO35P04T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMO35P04T1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40.3 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 35 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 35 nC
Tiempo de subida (tr): 20.2 nS
Conductancia de drenaje-sustrato (Cd): 190 pF
Resistencia entre drenaje y fuente RDS(on): 0.019 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET WMO35P04T1
WMO35P04T1 Datasheet (PDF)
wmo35p04t1.pdf
WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -35A DS DGTO-252R
wmo35p06ts.pdf
WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -60V, I = -35A GDS DTO-252R
wmo35n06t1.pdf
WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 35A DS D R
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
