All MOSFET. WMO35P04T1 Datasheet

 

WMO35P04T1 Datasheet and Replacement


   Type Designator: WMO35P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO252
 

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WMO35P04T1 Datasheet (PDF)

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WMO35P04T1

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -35A DS DGTO-252R

 7.1. Size:605K  way-on
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WMO35P04T1

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -60V, I = -35A GDS DTO-252R

 9.1. Size:466K  way-on
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WMO35P04T1

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 35A DS D R

Datasheet: WMO25P04TS , WMO25P06T1 , WMO28N15T2 , WMO2N100D1 , WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , IRF540 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 .

History: HSM0048 | SSP65R190S2R

Keywords - WMO35P04T1 MOSFET datasheet

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