WMO35P04T1 Specs and Replacement
Type Designator: WMO35P04T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.2 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO252
WMO35P04T1 substitution
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WMO35P04T1 datasheet
wmo35p04t1.pdf
WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -40V, I = -35A DS D G TO-252 R ... See More ⇒
wmo35p06ts.pdf
WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -60V, I = -35A G DS D TO-252 R ... See More ⇒
wmo35n06t1.pdf
WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET Description WMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 35A DS D R ... See More ⇒
Detailed specifications: WMO25P04TS, WMO25P06T1, WMO28N15T2, WMO2N100D1, WMAA2N100D1, WMO30P03TS, WMO30P10TS, WMO35N06T1, IRF540N, WMO35P06TS, WMO40N04TS, WMO50P03T1, WMO50P04T1, WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1
Keywords - WMO35P04T1 MOSFET specs
WMO35P04T1 cross reference
WMO35P04T1 equivalent finder
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WMO35P04T1 substitution
WMO35P04T1 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMO15N12TS | BUK7C08-55AITE | AM3411PE
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