WMO35P04T1 Datasheet and Replacement
Type Designator: WMO35P04T1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20.2 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO252
WMO35P04T1 substitution
WMO35P04T1 Datasheet (PDF)
wmo35p04t1.pdf

WMO35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -40V, I = -35A DS DGTO-252R
wmo35p06ts.pdf

WMO35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMO35P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures S V = -60V, I = -35A GDS DTO-252R
wmo35n06t1.pdf

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 35A DS D R
Datasheet: WMO25P04TS , WMO25P06T1 , WMO28N15T2 , WMO2N100D1 , WMAA2N100D1 , WMO30P03TS , WMO30P10TS , WMO35N06T1 , IRF540 , WMO35P06TS , WMO40N04TS , WMO50P03T1 , WMO50P04T1 , WMO55N03T1 , WMO5N50D1B , WMO60N02T1 , WMO60N04T1 .
History: HSM0048 | SSP65R190S2R
Keywords - WMO35P04T1 MOSFET datasheet
WMO35P04T1 cross reference
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WMO35P04T1 replacement
History: HSM0048 | SSP65R190S2R



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