FDS2572 Todos los transistores

October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET General Description Features UltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10V Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal f

July 2013 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET General Description Features UltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10V Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for

September 2002 FDS2582 N-Channel PowerTrench MOSFET 150V, 4.1A, 66m Features Applications rDS(ON) = 57m (Typ.), VGS = 10V, ID = 4.1A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

FDS2582 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-8