FDS2572 - параметры транзистора MOSFET, его аналоги, datasheet

FDS2572 Datasheet (PDF)

..1. Size:273K fairchild semi
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October 2001FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal f

..2. Size:386K onsemi
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July 2013FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal for

9.1. Size:283K fairchild semi
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September 2002FDS2582N-Channel PowerTrench MOSFET150V, 4.1A, 66mFeatures Applications rDS(ON) = 57m (Typ.), VGS = 10V, ID = 4.1A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

9.2. Size:806K cn vbsemi
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FDS2582www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8

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