All MOSFET. FDS2572 Datasheet

 

FDS2572 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS2572
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: SO-8

 FDS2572 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS2572 Datasheet (PDF)

 ..1. Size:273K  fairchild semi
 fds2572.pdf

FDS2572 FDS2572

October 2001FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal f

 ..2. Size:386K  onsemi
 fds2572.pdf

FDS2572 FDS2572

July 2013FDS2572150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFETGeneral Description FeaturesUltraFET devices combine characteristics that enable RDS(ON) = 0.040 (Typ.), VGS = 10V benchmark efficiency in power conversion applications. Qg(TOT) = 29nC (Typ.), VGS = 10VOptimized for Rds(on), low ESR, low total and Miller gatecharge, these devices are ideal for

 9.1. Size:283K  fairchild semi
 fds2582.pdf

FDS2572 FDS2572

September 2002FDS2582N-Channel PowerTrench MOSFET150V, 4.1A, 66mFeatures Applications rDS(ON) = 57m (Typ.), VGS = 10V, ID = 4.1A DC/DC converters and Off-Line UPS Qg(tot) = 19nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

 9.2. Size:806K  cn vbsemi
 fds2582.pdf

FDS2572 FDS2572

FDS2582www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8

Datasheet: FDPF8N50NZF , FDPF8N50NZU , FDPF8N60ZUT , STF2459A , FDQ7236AS , STF2458A , FDQ7238AS , STF2458 , AON7506 , FDS2582 , FDS2670 , STF2456 , FDS2672 , STF2455 , FDS2672F085 , STF2454A , FDS2734 .

History: IXTF200N10T

 

 
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