WML6N80D1 Todos los transistores

 

WML6N80D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WML6N80D1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27.6 nS
   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO220F

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WML6N80D1 Datasheet (PDF)

 ..1. Size:1168K  way-on
wmo6n80d1 wml6n80d1.pdf

WML6N80D1
WML6N80D1

WMO6N80D1 WML6N80D1800V 6A 2.5 N-ch Power MOSFETDescriptionTO-220FTO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGGrobust and RoHS compliant.DSSFeatures Typ.R =2.5@V =10VDS(on) GS 100%

 9.1. Size:1270K  way-on
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf

WML6N80D1
WML6N80D1

WMK6N90D1 WML6N90D1 WMM6N90D1900V 6A 1.7 N-ch Power MOSFETDescriptionTO-263TO-220 TO-220FWMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGG GDDS SSFeatures Typ.R =1.7@V =

 9.2. Size:1227K  way-on
wml6n100d1.pdf

WML6N80D1
WML6N80D1

WML6N100D1 1000V 6A 2.1 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmaxD S Typ.R =2.1@V =10V DS(on)

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