WML6N80D1 Specs and Replacement
Type Designator: WML6N80D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.6 nS
Cossⓘ - Output Capacitance: 118 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO220F
WML6N80D1 substitution
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WML6N80D1 datasheet
wmo6n80d1 wml6n80d1.pdf
WMO6N80D1 WML6N80D1 800V 6A 2.5 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G G robust and RoHS compliant. D S S Features Typ.R =2.5 @V =10V DS(on) GS 100%... See More ⇒
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf
WMK6N90D1 WML6N90D1 WMM6N90D1 900V 6A 1.7 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. D G G G D D S S S Features Typ.R =1.7 @V =... See More ⇒
wml6n100d1.pdf
WML6N100D1 1000V 6A 2.1 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmax D S Typ.R =2.1 @V =10V DS(on)... See More ⇒
Detailed specifications: WMO55N03T1, WMO5N50D1B, WMO60N02T1, WMO60N04T1, WMO60P02TS, WMO60P03TS, WMO690N15HG2, WMO6N80D1, IRF3710, WMO75N04T1, WMO80N03T1, WMO80N06TS, WMO80N08TS, WMO80P04TS, WMO90N02T1, WMO90P03TS, WMO90P04TS
Keywords - WML6N80D1 MOSFET specs
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