WMQ090NV6LG4 Todos los transistores

 

WMQ090NV6LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMQ090NV6LG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.5 nS

Cossⓘ - Capacitancia de salida: 355 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PDFN3030-8L

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WMQ090NV6LG4 datasheet

 ..1. Size:624K  way-on
 wmq090nv6lg4.pdf pdf_icon

WMQ090NV6LG4

WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMQ090NV6LG4 uses Wayon's 4th generation power trench D D MOSFET technology that has been especially tailored to minimize the S G S S S S on-state resistance and yet maintain superior switching performance. G S This device is well suited for high efficiency fast switching applications.

 7.1. Size:686K  way-on
 wmq090n04lg2.pdf pdf_icon

WMQ090NV6LG4

WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

 9.1. Size:491K  way-on
 wmq099n10lg2.pdf pdf_icon

WMQ090NV6LG4

WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state S G S S resistance and yet maintain superior switching performance. This S S G S device is well suited for high efficiency fast switching applications P

 9.2. Size:985K  way-on
 wmq098n03lg2.pdf pdf_icon

WMQ090NV6LG4

WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET S G technology that has been especially tailored to minimize the on-state S S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching app

MOSTRAR MÁS

Otros transistores... WMQ040N03LG2 , WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , WMQ080N03LG2 , WMQ090N04LG2 , K4145 , WMQ098N03LG2 , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS .

 

 

 

 

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