WMQ090NV6LG4 MOSFET Datasheet: N-Ch, 65V, 44A. Full specification with pinout and replacement list

WMQ090NV6LG4 Specs and Replacement

Type Designator: WMQ090NV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 355 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN3030-8L

WMQ090NV6LG4 substitution

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WMQ090NV6LG4 datasheet

..1. Size:624K way-on
wmq090nv6lg4.pdf pdf_icon

WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMQ090NV6LG4 uses Wayon's 4th generation power trench D D MOSFET technology that has been especially tailored to minimize the S G S S S S on-state resistance and yet maintain superior switching performance. G S This device is well suited for high efficiency fast switching applications. ... See More ⇒

7.1. Size:686K way-on
wmq090n04lg2.pdf pdf_icon

WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD... See More ⇒

9.1. Size:491K way-on
wmq099n10lg2.pdf pdf_icon

WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state S G S S resistance and yet maintain superior switching performance. This S S G S device is well suited for high efficiency fast switching applications P... See More ⇒

9.2. Size:985K way-on
wmq098n03lg2.pdf pdf_icon

WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET S G technology that has been especially tailored to minimize the on-state S S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching app... See More ⇒

Detailed specifications: WMQ040N03LG2, WMQ048NV6HG4, WMQ048NV6LG4, WMQ050N03LG4, WMQ050N04LG2, WMQ060N08LG2, WMQ080N03LG2, WMQ090N04LG2, K4145, WMQ098N03LG2, WMQ099N10LG2, WMQ10N10TS, WMQ119N10LG2, WMQ12P10TS, WMQ140DNV6LG4, WMQ140NV6LG4, WMQ15DN04TS