WMQ090NV6LG4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMQ090NV6LG4
Marking Code: 090NV6L4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21.7 nC
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 355 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN3030-8L
WMQ090NV6LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMQ090NV6LG4 Datasheet (PDF)
wmq090nv6lg4.pdf
WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDWMQ090NV6LG4 uses Wayon's 4th generation power trench D DMOSFET technology that has been especially tailored to minimize the SGSSSSon-state resistance and yet maintain superior switching performance. GSThis device is well suited for high efficiency fast switching applications.
wmq090n04lg2.pdf
WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD
wmq099n10lg2.pdf
WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state SGSSresistance and yet maintain superior switching performance. This SSGSdevice is well suited for high efficiency fast switching applicationsP
wmq098n03lg2.pdf
WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching app
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100