WMQ098N03LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMQ098N03LG2 Datasheet (PDF)

..1. Size:985K way-on
wmq098n03lg2.pdf pdf_icon

WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching app

9.1. Size:491K way-on
wmq099n10lg2.pdf pdf_icon

WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state SGSSresistance and yet maintain superior switching performance. This SSGSdevice is well suited for high efficiency fast switching applicationsP

9.2. Size:686K way-on
wmq090n04lg2.pdf pdf_icon

WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

9.3. Size:624K way-on
wmq090nv6lg4.pdf pdf_icon

WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDWMQ090NV6LG4 uses Wayon's 4th generation power trench D DMOSFET technology that has been especially tailored to minimize the SGSSSSon-state resistance and yet maintain superior switching performance. GSThis device is well suited for high efficiency fast switching applications.

Otros transistores... WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , WMQ080N03LG2 , WMQ090N04LG2 , WMQ090NV6LG4 , TK10A60D , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 .