WMQ098N03LG2. Аналоги и основные параметры
Наименование производителя: WMQ098N03LG2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 26.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 42 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4.1 ns
Cossⓘ - Выходная емкость: 250 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0098 Ohm
Тип корпуса: PDFN3030-8L
Аналог (замена) для WMQ098N03LG2
- подборⓘ MOSFET транзистора по параметрам
WMQ098N03LG2 даташит
wmq098n03lg2.pdf
WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET S G technology that has been especially tailored to minimize the on-state S S S S G S resistance and yet maintain superior switching performance. This PDFN3030-8L device is well suited for high efficiency fast switching app
wmq099n10lg2.pdf
WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state S G S S resistance and yet maintain superior switching performance. This S S G S device is well suited for high efficiency fast switching applications P
wmq090n04lg2.pdf
WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET S G S technology that has been especially tailored to minimize the on-state S S S G S resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD
wmq090nv6lg4.pdf
WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMQ090NV6LG4 uses Wayon's 4th generation power trench D D MOSFET technology that has been especially tailored to minimize the S G S S S S on-state resistance and yet maintain superior switching performance. G S This device is well suited for high efficiency fast switching applications.
Другие MOSFET... WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , WMQ080N03LG2 , WMQ090N04LG2 , WMQ090NV6LG4 , 13N50 , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 .
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Список транзисторов
Обновления
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