All MOSFET. WMQ098N03LG2 Datasheet

 

WMQ098N03LG2 Datasheet and Replacement


   Type Designator: WMQ098N03LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: PDFN3030-8L
 

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WMQ098N03LG2 Datasheet (PDF)

 ..1. Size:985K  way-on
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WMQ098N03LG2

WMQ098N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ098N03LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching app

 9.1. Size:491K  way-on
wmq099n10lg2.pdf pdf_icon

WMQ098N03LG2

WMQ099N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDWMQ099N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state SGSSresistance and yet maintain superior switching performance. This SSGSdevice is well suited for high efficiency fast switching applicationsP

 9.2. Size:686K  way-on
wmq090n04lg2.pdf pdf_icon

WMQ098N03LG2

WMQ090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DDDD DWMQ090N04LG2 uses Wayon's 2nd generation power trench MOSFET SGStechnology that has been especially tailored to minimize the on-state SSSGSresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PD

 9.3. Size:624K  way-on
wmq090nv6lg4.pdf pdf_icon

WMQ098N03LG2

WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDWMQ090NV6LG4 uses Wayon's 4th generation power trench D DMOSFET technology that has been especially tailored to minimize the SGSSSSon-state resistance and yet maintain superior switching performance. GSThis device is well suited for high efficiency fast switching applications.

Datasheet: WMQ048NV6HG4 , WMQ048NV6LG4 , WMQ050N03LG4 , WMQ050N04LG2 , WMQ060N08LG2 , WMQ080N03LG2 , WMQ090N04LG2 , WMQ090NV6LG4 , TK10A60D , WMQ099N10LG2 , WMQ10N10TS , WMQ119N10LG2 , WMQ12P10TS , WMQ140DNV6LG4 , WMQ140NV6LG4 , WMQ15DN04TS , WMQ175N10HG4 .

History: IRFR3709Z | SIHA21N60EF | SRM7N65 | IRF7324 | APT20M18B2VFR | IRLU2905Z | NCEP055N10G

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