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WMR05P04TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMR05P04TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.1 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: DFN2020-6L
 

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WMR05P04TS Datasheet (PDF)

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WMR05P04TS

WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -40V, I = -5A DS DR

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 wmr05n10ts.pdf pdf_icon

WMR05P04TS

WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR05N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =100V, I = 5A DS DR

 9.2. Size:617K  way-on
 wmr050n03lg4.pdf pdf_icon

WMR05P04TS

WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDDWMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appli

Otros transistores... WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , RU7088R , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 .

History: STI32N65M5 | SWD7N60K2F

 

 
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