WMR05P04TS - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMR05P04TS
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7.1 ns
Cossⓘ - Выходная емкость: 87 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: DFN2020-6L
Аналог (замена) для WMR05P04TS
WMR05P04TS Datasheet (PDF)
wmr05p04ts.pdf
WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -40V, I = -5A DS DR
wmr05n10ts.pdf
WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR05N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =100V, I = 5A DS DR
wmr050n03lg4.pdf
WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDDWMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appli
Другие MOSFET... WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , IRFZ48N , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 .
Список транзисторов
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