All MOSFET. WMR05P04TS Datasheet

 

WMR05P04TS Datasheet and Replacement


   Type Designator: WMR05P04TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DFN2020-6L
 

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WMR05P04TS Datasheet (PDF)

 ..1. Size:642K  way-on
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WMR05P04TS

WMR05P04TS 40V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWMR05P04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -40V, I = -5A DS DR

 9.1. Size:598K  way-on
wmr05n10ts.pdf pdf_icon

WMR05P04TS

WMR05N10TS 100V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDWMR05N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. DDFeatures DFN2020-6L V =100V, I = 5A DS DR

 9.2. Size:617K  way-on
wmr050n03lg4.pdf pdf_icon

WMR05P04TS

WMR050N03LG4 30V N-Channel Enhancement Mode Power MOSFET GDPin1DSDescriptionDSDSDDDWMR050N03LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GDresistance and yet maintain superior switching performance. This DDFN2020-6Ldevice is well suited for high efficiency fast switching appli

Datasheet: WMQ50N04T1 , WMQ50P03T1 , WMQ55N04T1 , WMQ55P02T1 , WMQ60P02TS , WMQ80N03T1 , WMR050N03LG4 , WMR05N10TS , RU7088R , WMR07N03T1 , WMR07N06TS , WMR07P03TS , WMR09N02T1 , WMR10N03T1 , WMR12N03T1 , WMR12P02T1 , WMR13N03T1 .

History: AFP1913 | BRCS060N03ZB | STT06L01 | AFP4637W

Keywords - WMR05P04TS MOSFET datasheet

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