WMS048NV6HG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMS048NV6HG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.2 nS
Cossⓘ - Capacitancia de salida: 772 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de WMS048NV6HG4 MOSFET
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WMS048NV6HG4 datasheet
wms048nv6hg4.pdf
WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S S S on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. SOP-8L Features V =
wms048nv6lg4.pdf
WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features
wms04n10t1.pdf
WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R
wms04p10ts.pdf
WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R
Otros transistores... WMR12P02T1 , WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , AO4468 , WMS048NV6LG4 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS .
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