WMS048NV6HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WMS048NV6HG4
   Código: 048NV6H4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28.5 nC
   trⓘ - Tiempo de subida: 8.2 nS
   Cossⓘ - Capacitancia de salida: 772 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: SOP-8L

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WMS048NV6HG4 Datasheet (PDF)

..1. Size:811K way-on
wms048nv6hg4.pdf

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S SSon-state resistance and yet maintain superior switching performance. GThis device is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

5.1. Size:789K way-on
wms048nv6lg4.pdf

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

9.1. Size:982K way-on
wms04n10t1.pdf

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

9.2. Size:963K way-on
wms04p10ts.pdf

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

9.3. Size:750K way-on
wms04n10ts.pdf

WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description DDDWMS04N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 100V, I = 3.5A DS DR

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