Справочник MOSFET. WMS048NV6HG4

 

WMS048NV6HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMS048NV6HG4
   Маркировка: 048NV6H4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28.5 nC
   trⓘ - Время нарастания: 8.2 ns
   Cossⓘ - Выходная емкость: 772 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: SOP-8L

 Аналог (замена) для WMS048NV6HG4

 

 

WMS048NV6HG4 Datasheet (PDF)

 ..1. Size:811K  way-on
 wms048nv6hg4.pdf

WMS048NV6HG4 WMS048NV6HG4

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S SSon-state resistance and yet maintain superior switching performance. GThis device is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

 5.1. Size:789K  way-on
 wms048nv6lg4.pdf

WMS048NV6HG4 WMS048NV6HG4

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 9.1. Size:982K  way-on
 wms04n10t1.pdf

WMS048NV6HG4 WMS048NV6HG4

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

 9.2. Size:963K  way-on
 wms04p10ts.pdf

WMS048NV6HG4 WMS048NV6HG4

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

 9.3. Size:750K  way-on
 wms04n10ts.pdf

WMS048NV6HG4 WMS048NV6HG4

WMS04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description DDDWMS04N10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 100V, I = 3.5A DS DR

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