WMS048NV6HG4 MOSFET Datasheet: N-Ch, 65V, 18.5A. Full specification with pinout and replacement list

WMS048NV6HG4 Specs and Replacement

Type Designator: WMS048NV6HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 772 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: SOP8

WMS048NV6HG4 substitution

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WMS048NV6HG4 datasheet

..1. Size:811K way-on
wms048nv6hg4.pdf pdf_icon

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S S S on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. SOP-8L Features V =... See More ⇒

5.1. Size:789K way-on
wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features ... See More ⇒

9.1. Size:982K way-on
wms04n10t1.pdf pdf_icon

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R ... See More ⇒

9.2. Size:963K way-on
wms04p10ts.pdf pdf_icon

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R ... See More ⇒