WMS048NV6LG4 Todos los transistores

 

WMS048NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS048NV6LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 658 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: SOP-8L
     - Selección de transistores por parámetros

 

WMS048NV6LG4 Datasheet (PDF)

 ..1. Size:789K  way-on
 wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 5.1. Size:811K  way-on
 wms048nv6hg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S SSon-state resistance and yet maintain superior switching performance. GThis device is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

 9.1. Size:982K  way-on
 wms04n10t1.pdf pdf_icon

WMS048NV6LG4

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

 9.2. Size:963K  way-on
 wms04p10ts.pdf pdf_icon

WMS048NV6LG4

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 18N50A | 2SK630 | TPCA8006-H | PE528BA | PHD55N03LTA | HUFA76413D3S | PHP11N50E

 

 
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