WMS048NV6LG4 - аналоги и даташиты транзистора

 

WMS048NV6LG4 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMS048NV6LG4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8.4 ns
   Cossⓘ - Выходная емкость: 658 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для WMS048NV6LG4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS048NV6LG4 Datasheet (PDF)

 ..1. Size:789K  way-on
 wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 5.1. Size:811K  way-on
 wms048nv6hg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S SSon-state resistance and yet maintain superior switching performance. GThis device is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

 9.1. Size:982K  way-on
 wms04n10t1.pdf pdf_icon

WMS048NV6LG4

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

 9.2. Size:963K  way-on
 wms04p10ts.pdf pdf_icon

WMS048NV6LG4

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , IRF730 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 .

History: FDP150N10 | SGO4606T | STLT19

 

 
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