WMS048NV6LG4 - описание и поиск аналогов

 

WMS048NV6LG4. Аналоги и основные параметры

Наименование производителя: WMS048NV6LG4

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.4 ns

Cossⓘ - Выходная емкость: 658 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm

Тип корпуса: SOP8

Аналог (замена) для WMS048NV6LG4

- подборⓘ MOSFET транзистора по параметрам

 

WMS048NV6LG4 даташит

 ..1. Size:789K  way-on
 wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET S technology that has been especially tailored to minimize the on-state S S resistance and yet maintain superior switching performance. This G SOP-8L device is well suited for high efficiency fast switching applications. Features

 5.1. Size:811K  way-on
 wms048nv6hg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S S S on-state resistance and yet maintain superior switching performance. G This device is well suited for high efficiency fast switching applications. SOP-8L Features V =

 9.1. Size:982K  way-on
 wms04n10t1.pdf pdf_icon

WMS048NV6LG4

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMS04N10T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S Features G SOP-8L V = 100V, I = 4A DS D R

 9.2. Size:963K  way-on
 wms04p10ts.pdf pdf_icon

WMS048NV6LG4

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET D Description D D WMS04P10TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = -100V, I = -3.5A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMR13N03T1 , WMR140NV6LG4 , WMR14N03TB , WMR15N02T1 , WMR15N03TS , WMS02P15TS , WMS032N04LG2 , WMS048NV6HG4 , IRF730 , WMS04N10T1 , WMS04N10TS , WMS04P10TS , WMS05P04TS , WMS05P06T1 , WMS05P10TS , WMS06N10TS , WMS06N15T2 .

History: KP214A9 | 2SK1837

 

 

 

 

↑ Back to Top
.