All MOSFET. WMS048NV6LG4 Datasheet

 

WMS048NV6LG4 Datasheet and Replacement


   Type Designator: WMS048NV6LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 658 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: SOP-8L
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WMS048NV6LG4 Datasheet (PDF)

 ..1. Size:789K  way-on
 wms048nv6lg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

 5.1. Size:811K  way-on
 wms048nv6hg4.pdf pdf_icon

WMS048NV6LG4

WMS048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS048NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S SSon-state resistance and yet maintain superior switching performance. GThis device is well suited for high efficiency fast switching applications. SOP-8LFeatures V =

 9.1. Size:982K  way-on
 wms04n10t1.pdf pdf_icon

WMS048NV6LG4

WMS04N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMS04N10T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = 100V, I = 4A DS DR

 9.2. Size:963K  way-on
 wms04p10ts.pdf pdf_icon

WMS048NV6LG4

WMS04P10TS 100V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS04P10TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -100V, I = -3.5A DS DR

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - WMS048NV6LG4 MOSFET datasheet

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