FDS3512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

December 2000FDS357080V N-Channel PowerTrench MOSFETGeneral Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.023 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Fast swi

December 2000FDS358080V N-Channel PowerTrench MOSFETGeneral Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.033 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (3

November 2000FDS359080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 44 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster

November 2003FDS3572N-Channel PowerTrench MOSFET80V, 8.9A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 8.9A Primary switch for Isolated DC/DC converters Qg(tot) = 31nC (Typ.), VGS = 10V Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low QRR Body DiodeConv