FDS3512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS3512
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SO-8

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FDS3512 Datasheet (PDF)

..1. Size:86K fairchild semi
fds3512.pdf

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

9.1. Size:81K fairchild semi
fds3570.pdf

December 2000FDS357080V N-Channel PowerTrench MOSFETGeneral Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.023 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Fast swi

9.2. Size:83K fairchild semi
fds3580.pdf

December 2000FDS358080V N-Channel PowerTrench MOSFETGeneral Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.033 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (3

9.3. Size:86K fairchild semi
fds3590.pdf

November 2000FDS359080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 44 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster

9.4. Size:628K fairchild semi
fds3572.pdf

November 2003FDS3572N-Channel PowerTrench MOSFET80V, 8.9A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 8.9A Primary switch for Isolated DC/DC converters Qg(tot) = 31nC (Typ.), VGS = 10V Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low QRR Body DiodeConv

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