All MOSFET. FDS3512 Datasheet

 

FDS3512 Datasheet and Replacement


   Type Designator: FDS3512
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO-8
 

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FDS3512 Datasheet (PDF)

 ..1. Size:86K  fairchild semi
 fds3512.pdf pdf_icon

FDS3512

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

 9.1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3512

December 2000FDS357080V N-Channel PowerTrench MOSFETGeneral Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.023 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Fast swi

 9.2. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3512

December 2000FDS358080V N-Channel PowerTrench MOSFETGeneral Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.033 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (3

 9.3. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3512

November 2000FDS359080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 44 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster

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Keywords - FDS3512 MOSFET datasheet

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