FDS3512 Datasheet. Specs and Replacement

Type Designator: FDS3512  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SO-8

  📄📄 Copy 

FDS3512 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDS3512 datasheet

 ..1. Size:86K  fairchild semi
 fds3512.pdf pdf_icon

FDS3512

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO... See More ⇒

 9.1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3512

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi... See More ⇒

 9.2. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3512

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3... See More ⇒

 9.3. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3512

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster... See More ⇒

SHOW MORE

Detailed specifications: FDS2582, FDS2670, STF2456, FDS2672, STF2455, FDS2672F085, STF2454A, FDS2734, 12N60, FDS3572, FDS3590, FDS3672, STF2454, FDS3692, STF06N20, FDS3890, FDS3992

Keywords - FDS3512 MOSFET specs

 FDS3512 cross reference

 FDS3512 equivalent finder

 FDS3512 pdf lookup

 FDS3512 substitution

 FDS3512 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility