Справочник MOSFET. FDS3512

 

FDS3512 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS3512
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS3512

 

 

FDS3512 Datasheet (PDF)

 ..1. Size:86K  fairchild semi
 fds3512.pdf

FDS3512 FDS3512

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

 9.1. Size:81K  fairchild semi
 fds3570.pdf

FDS3512 FDS3512

December 2000FDS357080V N-Channel PowerTrench MOSFETGeneral Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 VThis N-Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.023 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Fast swi

 9.2. Size:83K  fairchild semi
 fds3580.pdf

FDS3512 FDS3512

December 2000FDS358080V N-Channel PowerTrench MOSFETGeneral Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.033 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (3

 9.3. Size:86K  fairchild semi
 fds3590.pdf

FDS3512 FDS3512

November 2000FDS359080V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 44 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster

 9.4. Size:628K  fairchild semi
 fds3572.pdf

FDS3512 FDS3512

November 2003FDS3572N-Channel PowerTrench MOSFET80V, 8.9A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 8.9A Primary switch for Isolated DC/DC converters Qg(tot) = 31nC (Typ.), VGS = 10V Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low QRR Body DiodeConv

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