WMS10N04TS Todos los transistores

 

WMS10N04TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMS10N04TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.1 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: SOP8

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WMS10N04TS datasheet

 ..1. Size:994K  way-on
 wms10n04ts.pdf pdf_icon

WMS10N04TS

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMS10N04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 40V, I =10A DS D R

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WMS10N04TS

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 40V, I =10A DS D R

 9.2. Size:877K  way-on
 wms10dh04ts.pdf pdf_icon

WMS10N04TS

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS10DH04TS uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 10A DS D R

Otros transistores... WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , 7N65 , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 .

History: BUK752R3-40E | TPC8022-H

 

 

 

 

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