WMS10N04TS - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMS10N04TS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 2.1 ns
Cossⓘ - Выходная емкость: 110 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: SOP8
Аналог (замена) для WMS10N04TS
WMS10N04TS Datasheet (PDF)
wms10n04ts.pdf

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description DDDWMS10N04TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 40V, I =10A DS DR
wms10dn04ts.pdf

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 40V, I =10A DS DR
wms10dh04ts.pdf

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET DescriptionD1D1D2WMS10DH04TS uses advanced power trench technology that has been D2especially tailored to minimize the on-state resistance and yet maintain S1G1superior switching performance.S2G2Features SOP-8L N - Channel V = 40V, I = 10A DS DR
Другие MOSFET... WMS090NV6LG4 , WMS099N10LGS , WMS09DP03TS , WMS09N06TS , WMS09P02TS , WMS09P06TS , WMS10DH04TS , WMS10DN04TS , AON7408 , WMS119N10LG2 , WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 .
History: 2N90G-TF3-T | STL34N65M5 | STL3NK40 | NTJS3157NT1G | S80N18RP | NTMFD4C85N
History: 2N90G-TF3-T | STL34N65M5 | STL3NK40 | NTJS3157NT1G | S80N18RP | NTMFD4C85N



Список транзисторов
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