WMS10N04TS PDF and Equivalents Search

 

WMS10N04TS Specs and Replacement

Type Designator: WMS10N04TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: SOP8

WMS10N04TS substitution

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WMS10N04TS datasheet

 ..1. Size:994K  way-on
wms10n04ts.pdf pdf_icon

WMS10N04TS

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMS10N04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 40V, I =10A DS D R ... See More ⇒

 9.1. Size:768K  way-on
wms10dn04ts.pdf pdf_icon

WMS10N04TS

WMS10DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D1 Description D1 D2 D2 WMS10DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1 G1 maintain superior switching performance. S2 G2 Features SOP-8L V = 40V, I =10A DS D R ... See More ⇒

 9.2. Size:877K  way-on
wms10dh04ts.pdf pdf_icon

WMS10N04TS

WMS10DH04TS 40V N+P Dual Channel Enhancement Mode Power MOSFET Description D1 D1 D2 WMS10DH04TS uses advanced power trench technology that has been D2 especially tailored to minimize the on-state resistance and yet maintain S1 G1 superior switching performance. S2 G2 Features SOP-8L N - Channel V = 40V, I = 10A DS D R ... See More ⇒

Detailed specifications: WMS090NV6LG4, WMS099N10LGS, WMS09DP03TS, WMS09N06TS, WMS09P02TS, WMS09P06TS, WMS10DH04TS, WMS10DN04TS, 7N65, WMS119N10LG2, WMS11P02TS, WMS11P04T1, WMS12P03T1, WMS13N03T1, WMS13P04T1, WMS140DNV6LG4, WMS140NV6LG4

Keywords - WMS10N04TS MOSFET specs

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