WMS14P03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WMS14P03T1 Datasheet (PDF)

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WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

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WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFe

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WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS140NV6LG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize Sthe on-state resistance and yet maintain superior switching SSperformance. This device is well suited for high efficiency fast Gswitching applications. SOP-8LFeatures

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WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 30V, I = 14A DS DR

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