WMS14P03T1 Todos los transistores

 

WMS14P03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS14P03T1
   Código: S14P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 13.2 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SOP-8L
 

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WMS14P03T1 Datasheet (PDF)

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WMS14P03T1

WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

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WMS14P03T1

WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFe

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WMS14P03T1

WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS140NV6LG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize Sthe on-state resistance and yet maintain superior switching SSperformance. This device is well suited for high efficiency fast Gswitching applications. SOP-8LFeatures

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WMS14P03T1

WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 30V, I = 14A DS DR

MOSTRAR MÁS

Otros transistores... WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , 5N60 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 .

History: IPP052N06L3G | WMP07N60C4 | CRST055N08N | MTB3D0N03BH8 | SFP055N80C2 | RCX220N25 | SNN01Z10Q

 

 
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