All MOSFET. WMS14P03T1 Datasheet

 

WMS14P03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMS14P03T1
   Marking Code: S14P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8L

 WMS14P03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMS14P03T1 Datasheet (PDF)

 ..1. Size:761K  way-on
wms14p03t1.pdf

WMS14P03T1
WMS14P03T1

WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

 9.1. Size:772K  way-on
wms140dnv6lg4.pdf

WMS14P03T1
WMS14P03T1

WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFe

 9.2. Size:868K  way-on
wms140nv6lg4.pdf

WMS14P03T1
WMS14P03T1

WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS140NV6LG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize Sthe on-state resistance and yet maintain superior switching SSperformance. This device is well suited for high efficiency fast Gswitching applications. SOP-8LFeatures

 9.3. Size:795K  way-on
wms14dn03t1.pdf

WMS14P03T1
WMS14P03T1

WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 30V, I = 14A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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