Справочник MOSFET. WMS14P03T1

 

WMS14P03T1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMS14P03T1
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13.2 ns
   Cossⓘ - Выходная емкость: 430 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: SOP-8L
 

 Аналог (замена) для WMS14P03T1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMS14P03T1 Datasheet (PDF)

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WMS14P03T1

WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

 9.1. Size:772K  way-on
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WMS14P03T1

WMS140DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS140DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFe

 9.2. Size:868K  way-on
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WMS14P03T1

WMS140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS140NV6LG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize Sthe on-state resistance and yet maintain superior switching SSperformance. This device is well suited for high efficiency fast Gswitching applications. SOP-8LFeatures

 9.3. Size:795K  way-on
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WMS14P03T1

WMS14DN03T1 30V Dual N-Channel Enhancement Mode Power MOSFET D1DescriptionD1D2D2WMS14DN03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G1maintain superior switching performance. S2G2Features SOP-8L V = 30V, I = 14A DS DR

Другие MOSFET... WMS11P02TS , WMS11P04T1 , WMS12P03T1 , WMS13N03T1 , WMS13P04T1 , WMS140DNV6LG4 , WMS140NV6LG4 , WMS14DN03T1 , 5N60 , WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 .

History: FDMS86540 | WNM2046B | WMN10N65C4

 

 
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