WMS175DN10LG4 Todos los transistores

 

WMS175DN10LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMS175DN10LG4
   Código: 175DN10L4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 3.1 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 8.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 22.5 nC
   Tiempo de subida (tr): 3.6 nS
   Conductancia de drenaje-sustrato (Cd): 142 pF
   Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
   Paquete / Cubierta: SOP-8L

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WMS175DN10LG4 Datasheet (PDF)

 ..1. Size:977K  way-on
wms175dn10lg4.pdf

WMS175DN10LG4
WMS175DN10LG4

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 8.1. Size:784K  way-on
wms175n10hg4.pdf

WMS175DN10LG4
WMS175DN10LG4

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 8.2. Size:770K  way-on
wms175n10lg4.pdf

WMS175DN10LG4
WMS175DN10LG4

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.1. Size:769K  way-on
wms17p03ts.pdf

WMS175DN10LG4
WMS175DN10LG4

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

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