Справочник MOSFET. WMS175DN10LG4

 

WMS175DN10LG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMS175DN10LG4
   Маркировка: 175DN10L4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22.5 nC
   trⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 142 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
   Тип корпуса: SOP-8L

 Аналог (замена) для WMS175DN10LG4

 

 

WMS175DN10LG4 Datasheet (PDF)

 ..1. Size:977K  way-on
 wms175dn10lg4.pdf

WMS175DN10LG4 WMS175DN10LG4

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 8.1. Size:784K  way-on
 wms175n10hg4.pdf

WMS175DN10LG4 WMS175DN10LG4

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 8.2. Size:770K  way-on
 wms175n10lg4.pdf

WMS175DN10LG4 WMS175DN10LG4

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.1. Size:769K  way-on
 wms17p03ts.pdf

WMS175DN10LG4 WMS175DN10LG4

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

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