WMS175DN10LG4 MOSFET Datasheet: N-Ch, 100V, 8.5A. Full specification with pinout and replacement list

WMS175DN10LG4 Specs and Replacement

   Type Designator: WMS175DN10LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP8

WMS175DN10LG4 substitution

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WMS175DN10LG4 datasheet

..1. Size:977K way-on
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WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1 D1 Description D2 D2 WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1 G1 S2 on-state resistance and yet maintain superior switching performance. G2 This device is well suited for high efficiency fast switching applications. SOP-8L Fea... See More ⇒

8.1. Size:784K way-on
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WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features ... See More ⇒

8.2. Size:770K way-on
wms175n10lg4.pdf pdf_icon

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET D D Description D D WMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S S S resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. SOP-8L Features ... See More ⇒

9.1. Size:769K way-on
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