All MOSFET. WMS175DN10LG4 Datasheet

 

WMS175DN10LG4 Datasheet and Replacement


   Type Designator: WMS175DN10LG4
   Marking Code: 175DN10L4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.5 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP-8L
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WMS175DN10LG4 Datasheet (PDF)

 ..1. Size:977K  way-on
 wms175dn10lg4.pdf pdf_icon

WMS175DN10LG4

WMS175DN10LG4 100V N-Channel Enhancement Mode Power MOSFET D1D1DescriptionD2D2WMS175DN10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8LFea

 8.1. Size:784K  way-on
 wms175n10hg4.pdf pdf_icon

WMS175DN10LG4

WMS175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 8.2. Size:770K  way-on
 wms175n10lg4.pdf pdf_icon

WMS175DN10LG4

WMS175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS175N10LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.1. Size:769K  way-on
 wms17p03ts.pdf pdf_icon

WMS175DN10LG4

WMS17P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS17P03TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -30V, I = -17.5A DS DR

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Keywords - WMS175DN10LG4 MOSFET datasheet

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