WMT04N10TS Todos los transistores

 

WMT04N10TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMT04N10TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT223
 

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WMT04N10TS Datasheet (PDF)

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WMT04N10TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR

 9.1. Size:673K  way-on
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WMT04N10TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR

 9.2. Size:1003K  way-on
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WMT04N10TS

WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR

Otros transistores... WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , RFP50N06 , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 .

 

 
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